Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon
نویسندگان
چکیده
Damage introduced by dynamic secondary ion mass spectrometry ~SIMS! depth profiling is studied. A silicon sample with a boron marker layer was depth profiled by dynamic SIMS. After subsequent annealing at 750 °C for 30 min, the SIMS sample was reanalyzed by plan-view transmission electron microscope ~PTEM! and SIMS. PTEM images showed the presence of interstitial defects near the original SIMS crater, and SIMS depth profiles of similar regions exhibited boron diffusivity enhancements. Excess interstitials were introduced into the Si surface up to 2 mm from the original 225 mm3225 mm crater. Both PTEM and SIMS results showed that the damage and its effects diminished with an increase in distance from the original crater. © 2002 American Vacuum Society. @DOI: 10.1116/1.1497178#
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